PEMD9,115 datasheet

Маркировка

PEMD9,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PEMD9,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V Emitter- Base Voltage Vebo: 10 V Frequency - Transition: - ID_COMPONENTS: 1947957 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Peak Dc Collector Current: 100 mA Power - Max: 300mW Power Dissipation: 200 mW Resistor - Base (r1) (ohms): 10K Resistor - Emitter Base (r2) (ohms): 47K Transistor Polarity: NPN/PNP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Typical Input Resistor: 10 KOhms Typical Resistor Ratio: 0.21 Vce Saturation (max) @ Ib, Ic: 100mV @ 250?µA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934056706115, PEMD9 T/R
Количество страниц

9 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

70,90 KB